Diagnostic techniques for semiconductor materials and devices (Montreal PQ, 6-8 May 1997)Rai-Choudhury, P; Benton, J.L; Schroder, D.K et al.SPIE proceedings series. 1997, isbn 0-8194-2765-9, IX, 478 p, isbn 0-8194-2765-9Conference Proceedings

Direct observation and elimination of defects in gate oxide for reliable moslsisITSUMI, M.SPIE proceedings series. 1997, pp 147-159, isbn 0-8194-2765-9Conference Paper

Monitoring techniques of corrosive species affecting integrated circuit metal lithographyMAUTZ, K. E.SPIE proceedings series. 1997, pp 429-440, isbn 0-8194-2765-9Conference Paper

Identification and quantification of trace metal impurities in silicon using the ELYMAT lifetime measurementGUPTA, D. C.SPIE proceedings series. 1997, pp 267-279, isbn 0-8194-2765-9Conference Paper

Silicon on insulator characterization techniques and resultsWETTEROTH, T.SPIE proceedings series. 1997, pp 177-186, isbn 0-8194-2765-9Conference Paper

Characterization challenges for the ULSI ERASHAFFNER, T. J.SPIE proceedings series. 1997, pp 1-15, isbn 0-8194-2765-9Conference Paper

Monitoring and reduction of alkali metal contamination in dielectric oxidesMAUTZ, K. E.SPIE proceedings series. 1997, pp 68-79, isbn 0-8194-2765-9Conference Paper

New concerns for detection of pinholes in the passivation layer of IC'sSABIN, E.SPIE proceedings series. 1997, pp 419-428, isbn 0-8194-2765-9Conference Paper

Contactless evaluation of the common-emitter current gain factor in GaAlAs/GaAs hbts from the photovoltaic effect observed in contactless electroreflectance and photoreflectancePOLLAK, F. H; GAVRILENKO, V. I; KRYSTEK, W et al.SPIE proceedings series. 1997, pp 255-266, isbn 0-8194-2765-9Conference Paper

Defects induced by arsenic ion implantation and thin film-edge stressesCHANG, G; AL, R; CHIOU, H.-D et al.SPIE proceedings series. 1997, pp 123-131, isbn 0-8194-2765-9Conference Paper

Electrical impedance spectroscopy of siliconVEDDEL, J; VISCOR, P.SPIE proceedings series. 1997, pp 365-376, isbn 0-8194-2765-9Conference Paper

In-situ determination of Si wafer contamination using photoconductance decay measurementsMICHEL, J; REDDY, A. J; NORGA, G. J et al.SPIE proceedings series. 1997, pp 212-222, isbn 0-8194-2765-9Conference Paper

Integrated circuit tester using interferometric imagingDONALDSON, W. R; MICHAELS, E. M. R; AKOWUAH, K et al.SPIE proceedings series. 1997, pp 171-176, isbn 0-8194-2765-9Conference Paper

Defect identification by using laser imaging confocal microscopy (LICM)CAI, C; URITSKY, Y; FRANCIS, T et al.SPIE proceedings series. 1997, pp 187-192, isbn 0-8194-2765-9Conference Paper

Comparisow of SIMS and GF-AAS for the evaluation of gettering of Fe, Ni and co in polysilicon backsideOKUVCHI, S; SHABANI, M. B; YOSHIMI, T et al.SPIE proceedings series. 1997, pp 39-48, isbn 0-8194-2765-9Conference Paper

Noise as a spectroscopic tool for semiconductor characterisationCLAEYS, C; SIMOEN, E.SPIE proceedings series. 1997, pp 324-341, isbn 0-8194-2765-9Conference Paper

Novel goi failure analysis using SEM/MOS/EBIC with sub-nano ampere current breakdownTAMATSUKA, M; OKA, S; KIRK, H. R et al.SPIE proceedings series. 1997, pp 80-91, isbn 0-8194-2765-9Conference Paper

ULSI device characterization using nano-SRPDE WOLF, P; TRENKLER, T; CLARYSSE, T et al.SPIE proceedings series. 1997, pp 92-101, isbn 0-8194-2765-9Conference Paper

An enhanced system for automated wafer particle and crystalline defect inspectionLIE DOU; BATES, E.SPIE proceedings series. 1997, pp 193-203, isbn 0-8194-2765-9Conference Paper

In-line measurement of epitaxial silicon-germanium thin films by spectroscopic ellipsometryLIAW, H. M; YGARTUA, C.SPIE proceedings series. 1997, pp 160-170, isbn 0-8194-2765-9Conference Paper

Monitoring of dielectric quality with mercury (Hg) gate MOS current-voltage (Hg-MOSIV)HILLARD, R. J; MAZUR, R. G; GRUBER, G. A et al.SPIE proceedings series. 1997, pp 310-323, isbn 0-8194-2765-9Conference Paper

Novel analytical study on in-process deep submicron gate oxide by atomic force microscopyEBERHARDT, E. P; WALL, K. M.SPIE proceedings series. 1997, pp 114-122, isbn 0-8194-2765-9Conference Paper

Recombination phenomena in Si GaAs : The approach of the advanced method of transient microwave photoconductivity (AMTMP)CRABTCHAK, S; COCIVERA, M.SPIE proceedings series. 1997, pp 235-242, isbn 0-8194-2765-9Conference Paper

The dielectric breakdown characteristics of MOS capacitor of Cz-Si waferFURUKAWA, J; SHIOTA, T; KIDA, M et al.SPIE proceedings series. 1997, pp 342-349, isbn 0-8194-2765-9Conference Paper

Carrier density and thermal images of transient filaments in GaAs photoconductive switchesFALK, R. A; ZUTAVERN, F. J; O'MALLY, M. W et al.SPIE proceedings series. 1997, pp 243-254, isbn 0-8194-2765-9Conference Paper